Contact via for semiconductor device
US5317193A · kind A · utility
51Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1993 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Mar 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The etching selectivity is controlled by appropriately changing the dimension of the opening of each contact holes in forming simultaneously a plurality of contact holes of different depth by etching. By forming a dent in advance underlying the region where a contact hole is to be formed, the depth of the contact hole can be increased, whereby difference in the depths of the plurality of contact holes can be reduced. As a result, damage in the underlying layer or under etching in forming a plurality of contact holes of different depth simultaneously by etching can be solved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.