Method of fabricating semiconductor device
US5318917A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1993 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Feb 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating films extending on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion layer of the first conduction type, a collector contact diffusion layer of the first conduction type; and a base contact diffusion layer of the second conduction type; locating an…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.