Nitridation of titanium-tungsten interconnects
US5318924A · kind A · utility
51Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1993 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Jan 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming interconnects for submicron integrated circuits that allows use of titanium-tungsten as the interconnect material. The inherent instability of titanium-tungsten to oxidation is addressed by a nitridation process that includes exposing the interconnect to an ambient containing nitrogen (NH.sub.3) at an elevated temperature. Typically, the process is a rapid thermal anneal. A local interconnect may be formed, whereafter an insulating layer can be deposited at a high temperature without causing oxidation within the local interconnect that would adversely affect the resistivity of the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.