Single quantum well II-VI laser diode without cladding
US5319219A · kind A · utility
24Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | May 22, 1992 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | May 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/342
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer is positioned between the guiding layers. An Au electrode overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.