Silicon carbide semiconductor device
US5319220A · kind A · utility
27Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1992 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Jun 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.