Non-volatile storage device
US5319230A · kind A · utility
13Cited by
6References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 19, 1992 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | May 19, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile storage device such as a PROM (Programmable Read Only Memory). To obtain an adequate sum of captured charges by a low storing voltage and to prevent charges from being injected from a gate electrode, a silicon oxide film, a composite silicon oxide/nitride film and a silicon oxide film are formed in order on a gate region of a silicon substrate on which a source region and a drain region are formed. Since the composite silicon oxide/nitride film has many interfaces between the silicon oxide region and the silicon nitride region, it accumulates a lot of charges from the silicon substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.