Power semiconductor component
US5319237A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 1993 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Sep 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-encapsulated power conductor component with improved heat transfer has a chip bearing at least one power transistor having at least one interdigitated electrode, provided with an air bridge, and a sink provided with at least one metal islet in relief. The air bridge is reinforced and the chip is brazed in reverse to the islet of the sink by its air bridge. Other islets brazed to the metallizations on the rim of the chip reinforce the mechanical fixing. The access to the electrodes is obtained by via holes and the second face of the substrate may receive non-integrable components. The device can be applied to power transistors and integrated circuits, notably on GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.