Tunable semiconductor laser
US5319667A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1993 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Mar 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1032
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An interferometric semiconductor laser includes a cavity in the form of a Y and at east three individually actuatable active segments. A central segment couples together the individually actuatable active segments. The central segment is an active or passive segment that acts as a beam divider. The arrangement of the segments forms two resonator paths which contain at least one common active segment. At least one resonator path includes an active segment that does not belong to the other resonator path. In the absence of, or with the same actuation of the active segments, the optical path length of one resonator path differs from the optical path length of the other resonator path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.