Sputtering target
US5320729A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1992 |
| Grant date | Jun 14, 1994 |
| Priority date | — |
| Expiry date | Jul 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3491
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO.sub.2) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.