Method to electrochemically deposit compound semiconductors
US5320736A · kind A · utility
15Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1991 |
| Grant date | Jun 14, 1994 |
| Priority date | — |
| Expiry date | May 6, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S205/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to electrochemically deposit semiconductors and for the electrochemical formation of epitaxial thin-film, single-crystalline compound semiconductors comprising alternating electrodeposition of atomic layers of selected pairs of elements using underpotential deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.