Process for stabilizing spent silicon contact mass
US5321149A · kind A · utility
1Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1992 |
| Grant date | Jun 14, 1994 |
| Priority date | — |
| Expiry date | Dec 9, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/16
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A method is provided for passivating spent silicon contact mass by heating the spent silicon contact mass at a temperature in the range of from 200.degree. C. to 800.degree. C. in an oxygen containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.