Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices
US5321253A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1993 |
| Grant date | Jun 14, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The output electromagnetic power of optoelectric heterojunction semiconductor devices having an active semiconductor layer with a mobile charge carrier plasma is controlled by applying a microwave electric field inside the active layer by means of at least two semiconductor contacts to the active layer that are conducting to at least one type of mobile charge carrier and blocking to another type of charge carrier. An electrical signal is applied inside the active layer to transform the distribution of energies and equivalent temperature of the charge carriers of the mobile charge carriers in order to control light emission and absorption in the active layer. A modulator is disclosed with two such semiconductor contacts on the active layer in which charge carriers are optically generated. A monolithically integrated, cavity-coupled laser and modulator is disclosed in which the laser and modulator are fabricated on a common substrate and the laser is a distributed feedback laser (DFB). Another monolithically integrated cavity-coupled laser and modulator is fabricated in which the laser and modulator are coupled Fabrey-Perot optical cavities separated by a low-loss, 1-3 um groove. Ope…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.