Integratable capacitative pressure sensor and process for its manufacture

US5321989A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Günther Zimmer · Rheinau, DE
• Jorg Eichholz · Duisburg, DE
• Wilfried Mokwa · Krefeld, DE
• Michael Kandler · Birkenfeld, DE
• Yiannakis Manoli · Mülheim, DE

Key dates

• Filing date: Feb 26, 1993
• Grant date: Jun 21, 1994
• Expiry date: Feb 26, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/435
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).