InP solar cell with window layer

US5322573A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Raj Kumar Jain · Singapore, SG
• Geoffrey A. Landis · Berea, US

Key dates

• Filing date: Oct 2, 1992
• Grant date: Jun 21, 1994
• Expiry date: Oct 2, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or "window" layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.