Method of manufacturing semiconductors from homogeneous metal oxide powder
US5322642A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1992 |
| Grant date | Jun 21, 1994 |
| Priority date | — |
| Expiry date | Jul 28, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/54
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of manufacturing metal alloys to obtain a homogeneous powder made up of oxides of the metals and applications thereof to the manufacture of semiconductors and superconductors comprises, after placing the various metals selected in a crucible, melting the metals in a neutral or reducing atmosphere while stirring the liquid to homogenize it, recovering the liquid alloy, spraying the alloy obtained to form homogeneous powder particles of determined particle size, and oxidizing the particles. It applies to the manufacture of zinc oxide-based varistor type semiconductor ceramics and to the manufacture of superconductor products or positive or negative temperature coefficient thermistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.