Vertical current flow semiconductor device utilizing wafer bonding
US5323059A · kind A · utility
12Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1992 |
| Grant date | Jun 21, 1994 |
| Priority date | — |
| Expiry date | Oct 26, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Briefly stated, the present invention provides a vertical current flow semiconductor device (17). The vertical current flow semiconductor device (17) includes a semiconductor substrate (12) having an intermediate conductor layer (16) on a surface of the substrate (12). An active layer (11) that is used for forming active elements (20, 21, 22, 23) of the vertical current flow semiconductor device (17) is on the intermediate conductor layer (16). The intermediate conductor layer (16) forms an ohmic contact with the active layer (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.