Gaseous doping of tungsten oxide
US5324537A · kind A · utility
2Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1993 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Jul 6, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The procsses disclosed is for preparing a film of fluorine-modified tungsten oxide on a substrate. The process comprises providing a tungsten oxide film on the substrate and then exposing the tungsten oxide film at an elevated temperature to a stream of a gaseous fluorocarbon. The exposure takes place for a time sufficient to modify the tungsten oxide with fluorine and form a film having modified infrared adsorption and reflectant properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.