Patent · US Expired

Method of operating a semiconductor laser as a bistable opto-electronic component

US5325387A · kind A · utility

2Cited by

6References

10Claims

0Family size

Assignee

Alcatel N.V. · NL

Inventors

Dieter Baums · Ludwigsburg, DE
Michael Schilling · Stuttgart, DE
Wilfried Idler · Asperg, DE
Gert Laube · Stuttgart, DE
Klaus Wunstel · Schwieberdingen, DE
Olaf Hildebrand · Stuttgart, DE

Key dates

Filing date	Nov 24, 1992
Grant date	Jun 28, 1994
Priority date	—
Expiry date	Nov 24, 2012

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4031
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.