Plasma processing apparatus
US5326404A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 1992 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Dec 18, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus for processing a semiconductor wafer by using a plasma to fabricate a semiconductor device comprises: a film forming vessel having at least one film forming chamber for forming a Ti/TiN laminate layer or a Ti/TiON/TiN laminate layer on a semiconductor wafer therein; and a heating system for heating the side wall of the film forming vessel so that the inner surface of the side wall is heated at a predetermined temperature to prevent the deposition of a coarse TiN film or TiN particles, which are liable to deteriorate the quality of the laminate layer formed on the semiconductor wafer, over the inner surface of the side wall of the film forming vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.