Cubic boron nitride phosphide films
US5326424A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1992 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Jul 7, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/932
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The cubic boron nitride phosphide films are deposited using laser ablation methods. The boron nitride phosphide film has a crystallographic lattice constant which can be systematically varied depending upon the desired film composition and processing parameters. Preferably, the target, and accordingly the resulting thin film composition, is characterized by a chemical formula of BN.sub.(1-x) P.sub.(x) where x is about 0.23. This particular composition results in a crystallographic lattice constant essentially equal to the single crystal silicon substrate. The film may also have the formula BN1-xPx where x<0.ltoreq.1. The phosphorus concentration may also be decreased to zero throughout the film so as to provide boron nitride material at the surface, which is characterized by a good crystallographic lattice match with the underlying substrate. The resulting films are particularly suitable for semiconducting applications over a wide range of temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.