Electron beam lithography system
US5326979A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1992 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Sep 25, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3026
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.