SRAM with gate oxide films of varied thickness

US5327002A · kind A · utility

Assignee

• Kawasaki Steel Corporation · JP

Inventor

• Makoto Motoyoshi · Yokohama, JP

Key dates

• Filing date: May 8, 1992
• Grant date: Jul 5, 1994
• Expiry date: May 8, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B10/15

Abstract

A semiconductor memory device of the SRAM type includes a memory cell including a pair of inverters each having a resistor and a driving transistor connected in series forming a storage node at the junction point thereof. Switching transistors in the memory cell are respectively connected between the storage nodes and bit lines. A film thickness of a gate oxide film of each of the switching transistors (transfer MOS transistors) is larger than a film thickness of a gate oxide film of each of the driving transistors (driver MOS transistors).