Semiconductor device with hydrogen ion intercepting layer
US5327224A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1992 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Oct 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
A thin first insulating oxide film is formed on a semiconductor substrate. A thick second insulating oxide film is formed on a semiconductor substrate. A first polysilicon resistance film is formed on the first insulating oxide film. A second polysilicon resistance film is formed on the second insulating oxide film. An insulating protection film, which contains a large amount of hydrogen ion and covers the first polysilicon resistance film, second polysilicon resistance film, first electrode and second electrode, is formed on the semiconductor substrate. A hydrogen ion intercepting film, which prevents passage of hydrogen ion, is interposed between the first insulating oxide film and the first polysilicon resistance film and between the second insulating oxide film and second polysilicon resistance film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.