Optical semiconductor device and process of prodcuing same
US5327450A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device and a process of producing same ensuring a good device performance when a diffraction grating is formed by dry etching and component crystal layers are formed by an MOCVD process. The production process comprises the steps of: (1) processing a surface of a semiconductor wafer to form thereon a diffraction grating in the form of a periodic corrugation for selectively transmitting a light having a specific wavelength; (2) forming on the diffraction grating a guide layer, an active layer and a clad layer in that order; (3) forming on the clad layer a double heterostructure composed of lower and upper layers, the upper layer having a bandgap greater than that of the active layer; (4) measuring the photoluminescence intensity of the lower layer of the double heterostructure; and (5) determining whether or not subsequent process steps necessary for completing the optical semiconductor device should be executed, by using the measured value of the photoluminescence intensity as a discriminative value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.