Fabrication process for narrow groove
US5328554A · kind A · utility
2Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 24, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Nov 24, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for producing a narrow groove in a layer of, for example, silicon nitride, a wide groove is first formed in the layer. A layer of a metal, for example aluminium, is evaporated on to one side of the wide groove. The remainder of the wide groove is then filled with a material such a silicon nitride. The metal layer is then etched away, leaving a narrow groove in the silicon nitride equal to the thickness of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.