Process for making metallized vias in diamond substrates
US5328715A · kind A · utility
8Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1993 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Feb 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4076
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for making metallized vias in diamond substrates is disclosed. The process involves laser-drilling a plurality of holes in a CVD diamond substrate and depositing tungsten, or a similar refractory metal, in the holes by low pressure CVD to provide substantially void-free metallized vias. Diamond substrates having metallized vias are also disclosed. The structures are useful for making multichip modules for high clock rate computers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.