Method of forming film by plasma CVD
US5328737A · kind A · utility
5Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1993 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Mar 29, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a film on a substrate by plasma CVD, comprising the steps of: providing a discharge tube in a vacuum chamber; providing a partition wall around the discharge tube; evacuating space between the discharge tube and the partition wall to vacuum; providing the substrate at a position confronting the discharge tube; and effecting plasma discharge in the discharge tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.