Process for forming deposited film by use of alkyl aluminum hydride
US5328873A · kind A · utility
24Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Jun 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.