Method of fabricating a microelectronic photomultipler device with integrated circuitry
US5329110A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1993 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Nov 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J43/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microelectronic photomultiplier device is fabricated by discrete proceds to provide a photocathode-anode and dynode chain arrangement which is analogous in operation to conventional photomultiplier tubes. This microelectronic photomultiplier device provides for low level photon detection and realizes the advantages of high reliability, small size and fast response, plus lower cost, weight and power consumption compared to conventional photomultiplier tubes. In addition, the fabrication on an SOI substrate permits integration of logic and control circuitry with detectors. The insulating substrate also permits the integration of an on-chip high voltage supply and may easily be extended to a plurality of detectors offering improved performance and design flexibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.