Superluminescent diode having a quantum well and cavity length dependent threshold current
US5329134A · kind A · utility
2Cited by
20References
12Claims
0Family size
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Inventor
Key dates
| Filing date | Jan 10, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Jan 10, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/042
Abstract
A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of the quantum well allows operation at threshold currents which are substantially proportional to cavity length. Variation in threshold current with temperature is also reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.