Thin film transistor and its production method
US5329140A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Sep 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6713
Abstract
A thin film transistor having a larger ON-OFF current ratio is provided, in which a first insulating film having a first and second contact holes is formed on a substrate so as to cover a source and drain regions formed therein and a semiconductor film is formed on the first insulating film so as to be connected through the holes respectively to the source and drain regions. A second insulating film is formed on the semiconductor film and a gate electrode is formed thereon so as not be overlapped with the holes. In the offset region between each end of the gate electrode and the corresponding one of the holes, the insulation between the semiconductor film and the source and drain regions is provided by the first insulating film. This semiconductor film is weakly inverted by a drain voltage in the offset region, resulting in obtaining a leak current suppression action. The semiconductor film is preferable to be a polysilicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.