High voltage integrated flyback circuit in 2 .mu.m CMOS

US5329147A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• Tuan A. Vo · Albany, US
• Mohamad M. Mojaradi · Los Angeles, US
• Aram Nahidipour · Mill Creek, US

Key dates

• Filing date: Jan 4, 1993
• Grant date: Jul 12, 1994
• Expiry date: Jan 4, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60

Abstract

When a field effect transistor is used to control the current through an inductive load, the flyback voltage is felt through the vertical pnp transistor at the drain, which onducts to the substrate. This current represents a power loss and a source of heat. This invention supplies a second lateral transistor which conducts this current back to the power supply.