Semiconductor device and preparing method therefor
US5329148A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1991 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Oct 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/00
Abstract
A semiconductor device which comprises a semiconductive substrate having thereon a plurality of source/drain regions arranged parallel to each other and a plurality of gate electrodes which extend perpendicularly to and above the source/drain regions through a gate oxide film, wherein at least one of a specific pair of source and drain regions corresponding to any desired at least one of the gate electrodes is provided with an offsetting stepped portion extending in the direction of depth of the substrate, and the offsetting stepped portion is filled up with an insulating film for filling up the stepped portion, so that the specific source/drain region provided with the offsetting stepped portion is disposed with respect to the corresponding gate electrode through a step of the offsetting stepped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.