Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers

US5329150A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Erdmann F. Schubert · Hazlet, US
• Klaus Ploog · Stuttgart, DE
• Albrecht Fischer · Löchgau, DE

Key dates

• Filing date: Feb 8, 1993
• Grant date: Jul 12, 1994
• Expiry date: Feb 8, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth layer of a highly doped n-type semiconducting material similar to the second layer. First and second electrical connections are provided to the fourth layer and to at least one of the first and second layers. A plurality of pairs of Dirac-delta doped monoatomic layers are in the third layer, with the first monoatomic layer of each pair being a layer of donors and with the second monoatomic layer of each pair being acceptors spaced from the donor layer and positioned on the side thereof facing the fourth layer.