Ablative etch resistant coating for laser personalization of integrated circuits
US5329152A · kind A · utility
45Cited by
22References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Jan 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A programmable integrated circuit for prototyping applications including a first patterned metal layer, an insulation layer formed over the first metal layer and a second patterned metal layer formed over the insulation layer, the first and second patterned metal layers being formed with selectably removable regions, the insulation layer being formed with apertures overlying at least some of the selectably removable regions, and there being formed over the selectably removable regions a coating comprising a layer of a dielectric material of high laser radiation absorption coefficient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.