Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride
US5330633A · kind A · utility
28Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1992 |
| Grant date | Jul 19, 1994 |
| Priority date | — |
| Expiry date | Jul 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.