Semiconductor memory apparatus
US5332915A · kind A · utility
14Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1992 |
| Grant date | Jul 26, 1994 |
| Priority date | — |
| Expiry date | Oct 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high dielectric film instead of an oxidizing film conventionally used is used in the non-volatile memory of an MoNoS construction. Using a mixed film composed of a high dielectric constant film and an amorphous insulating film for the trap film, the ratio of the voltage applied to the tunnel oxidizing film is increased so that writing and erasing operations can be effected with a low voltage. Penetration of the electrons into the electrode and the flow of positive holes from the electrode are prevented so as to increase the flow efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.