Magnetron sputtering source
US5333726A · kind A · utility
14Cited by
2References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1993 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Jan 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.