Sputtering target for magnetic recording medium and method of producing the same
US5334267A · kind A · utility
28Cited by
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4Claims
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Key dates
| Filing date | Jul 30, 1993 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Jul 30, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S72/70
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sputtering target preferably having an average crystal-grain diameter of 300 .mu.m or less and a maximum magnetic permeability of 100 or less is formed of an alloy consisting essentially of, by atom, 5- 30% Ni, 5- 14% Cr, not more than 6% V, and balance of Co and unavoidable impurities. It is preferable for the target to keep a working-strain remaining therein to reduce the maximum magnetic permeability. A method of producing a sputtering target for magnetic recording and reproducing, in which warm working or cold working is applied to the alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.