Method of determining conditions for plasma silicon nitride film growth and method of manufacturing semiconductor device
US5334555A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1992 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Nov 6, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon nitride film is deposited on a semiconductor substrate in a plasma generated with SiH.sub.4 and nitride gases by the application of high-frequency electric energy. An allowable range of ultraviolet radiation absorption rates of the silicon nitride film, and also an allowable range of inner stresses of the silicon nitride film are established. Levels of both the flow rate of the SiH.sub.4 gas and the high-frequency electric energy are determined so that the silicon nitride film will satisfy the allowable range of ultraviolet radiation absorption rates with a wide margin and the allowable range of inner stresses with a wide margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.