CVD reactor with uniform layer depositing ability
US5336327A · kind A · utility
536Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor with a flat generally rectangularly shaped susceptor having a leading edge including a curve which is concave in the direction of gas flow through the reactor. The reactor produces epitaxial layers on semiconductor wafers in which the uniformity of the layer is dependent upon the radius of the concave curvature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.