Photoelectro-chemical etching method and apparatus of compound semiconductor
US5336379A · kind A · utility
5Cited by
5References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 20, 1992 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Oct 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S204/09
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The photoelectro-chemical etching system of compound semi-conductor is disclosed. The system comprises a laser generator, a shutter to cut off laser beam, a laser beam chopper, a secondary high reflection mirror, a beam expander, a waveform generator, a chopper controller, a potentiostat to apply the reverse or forward voltage to the optical glass cell. Instead of applying the reverse-bias voltage to a semiconductor material, the reverse and/or forward voltage with a uniform pulse period is applied so that homogeneous and damage-free surface is obtained and etching process is made available in a more efficient manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.