Method for the manufacture of a transistor having differentiated access regions
US5336627A · kind A · utility
1Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Jan 13, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.