Semiconductor laser with broad-area intra-cavity angled grating
US5337328A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Jul 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.