Device and method for depositing metal oxide films
US5338422A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1992 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Sep 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A triple magnetron array positioned inside a vacuum chamber is provided. The array includes a planar magnetron situated above dual rotatable unbalanced cylindrical magnetrons. The planar magnetron is partially shielded from the dual magnetrons by a baffle. An inert gas outlet is positioned near the planar magnetron target whereas oxygen gas outlets are positioned near the cylindrical magnetrons. In this fashion, the reactive gas flow to the planar magnetron is restricted. The system is particularly well suited for forming metal oxide films, such as titanium oxide, that are difficult to deposit by conventional means. The oxygen flow rate is controlled so that the planar magnetron operates in the metallic mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.