Far-infrared emitter of high emissivity and corrosion resistance and method for the preparation thereof
US5338616A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 8, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Apr 8, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A far-infrared emitter of high corrosion resistance is prepared by an oxidizing heat treatment of a body made from a stainless steel of 20-35% by weight of chromium, 0.5-5.0% by weight of molybdenum, up to 3.0% by weight of manganese and up to 3.0% by weight of silicon at 900.degree.-1200.degree. C. to form an oxidized surface film having a thickness of at least 0.2 mg/cm.sup.2. Further, a far-infrared emitter of a high emissivity approximating a black body is prepared by subjecting a body made from a stainless steel of 10-35% by weight of chromium, 1.0-4.0% by weight of silicon and up to 3.0% by weight of manganese to a blasting treatment to roughen the surface followed by an oxidizing heat treatment at 900.degree.-1200.degree. C. to form an oxide film on the surface in the form of protrusions having a length of at least 5 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.