Doping method of barrier region in semiconductor device
US5338697A · kind A · utility
31Cited by
14References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1990 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Dec 3, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exposed active surface is prepared on a major surface of a semiconductor substrate. A source gas containing an impurity component is applied to the exposed active surface to adsorb thereon a film of the impurity component so as to form a barrier region along the major surface of the semiconductor substrate. A semiconductor device is formed on the major surface of the semiconductor substrate and is protected by the barrier region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.