Charge-coupled device with open gate structure
US5338948A · kind A · utility
6Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Mar 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
The light gathering capability or quantum efficiency of a charge-coupled device is improved by the configuration of the multi-phase gate structure to leave large surface areas of the semiconductor substrate uncovered. Each of the electrodes of the multi-phase gate structure is configured as a series of shallow H-shaped geometries, only the vertical elements of which overlap to ensure that multi-phase operation can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.