High density interconnect structure including a spacer structure and a gap
US5338975A · kind A · utility
45Cited by
13References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1990 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Jul 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency electronic component which is interconnected with other components through a high density interconnect structure sees only an air dielectric constant in the high density interconnect structure because a spacer structure disposed on the electronic component spaces the dielectric of the high density interconnect structure from the surface of the electronic component by a sufficient distance that the higher dielectric constant of the polymer dielectric layers of the high density interconnect structure only minimally affects the operating characteristics of the electronic components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.