Process fo the production of Si.sub.2 N.sub.4 using a silicon, phosphorous and nitrogen containing precursor
US5340561A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Dec 20, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/72
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen-and phosphorus-containing compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.