Patent · US Expired

Process fo the production of Si.sub.2 N.sub.4 using a silicon, phosphorous and nitrogen containing precursor

US5340561A · kind A · utility

1Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 1993
Grant dateAug 23, 1994
Priority date
Expiry dateDec 20, 2013

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2002/72
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen-and phosphorus-containing compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.